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ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 20 NO. 4 60 T his column covers peer-reviewedarticles published since 2015 onbeam-basedanalysis techniques, including atomic, electron, neutron, ion, and x-ray beam technologies, as well as atomprobe tomography (APT). These technologies typically offer the highest resolution, sometimes down to the atomic level. In addition, focused ion beams (FIB) are fundamental to inspecting andmodifying electronic circuits. Note that inclusion in the list does not vouch for the article’s quality and category sorting is by no means strict. If you wish to share an interesting, recently published peer-reviewed article with the community, please forward the citation to the above email address and I will try to include it in future installments. Entries are listed in alphabetical order by first author, then title, journal, year, volume, and first page. Note that in some cases bracketed text is inserted into the title to provide clarity about the article topic. Peer-Reviewed Literature of Interest to Failure Analysis: Beam-Based Analysis Techniques Michael R. Bruce, Consultant mike.bruce@earthlink.net LITERATURE REVIEW

• R. Kirchhofer, D.R. Diercks, andB.P. Gorman: “Electron Diffraction and Imaging for Atom Probe Tomog- raphy,” Rev. Sci. Instrum., 2018, 89, p. 053706. • R.K. Lam, S.L. Raj, T.A. Pascal, et al.: “Soft X-Ray Sec- ond Harmonic Generation as an Interfacial Probe [with Elemental Specificity],” Phys. Rev. Lett., 2018, 120, p 023901; also see A Nilsson: “Viewpoint: X-Ray Probe Targets Interfaces,” Physics, 2018, 11, p. 2. • M. Lei and K.T. Wu, “Detection of Sub-Design Rule Shorts [using Electron Beam] for Process De- velopment in Advanced Technology Nodes,” IEEE Trans. Semicond. Manuf., 2017, 30, p. 418. • Z. Liao, M. Gall, K.B. Yeap, et al.: “TEM Investigation of Time-Dependent Dielectric BreakdownMechanisms in Cu/Low-k Interconnects,” IEEE Trans. Dev. Mater. Rel., 2016, 16, p. 455. • C.H. Liebscher, A. Stoffers, M. Alam, et al.: “Strain- Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries [using APT],” Phys. Rev. Lett., 2018, 121, p. 015702. • T. H. Loeber, B. Laegel, and S. Wolff, “Reducing Curtaining Effects in FIB/SEM Applications by a Goniometer Stage and an Image Processing Method,” J. Vac. Sci. & Technol., B, 2017, 35, p. 06GK01. • F.E. Merrill, J. Goett, J.W. Gibbs, et al., “Demonstration of Transmission High Energy Electron Microscopy [for Thicker samples and Fast Imaging],” Appl. Phys. Lett., 2018, 112, p. 144103. • L. Mino, E. Borfecchia, J. Segura-Ruiz, et al.: “Materials Characterizationby SynchrotronX-RayMicroprobes andNanoprobes,” Rev. Mod. Phys., 2018, 90, p. 025007.

• K. Dittmar, D.H. Triyoso, H-J Engelmann, et al.: “ [Review Article] The Application of Low Energy Ion Scattering Spectroscopy (LEIS) in Sub 28 - nm CMOS Technology,” Surf. Interface Anal., 2017, 49, p. 1175. • R. Flatabø, S.D. Eder, A.K. Ravn, et al.: “Fast Resolution Change inNeutral HeliumAtomMicroscopy,” Rev. Sci. Instrum., 2018, 89, p. 053702. • R Flatabø, M.M. Greve, S.D. Eder, et al.: “AtomSieve for Nanometer ResolutionNeutral HeliumMicroscopy,” J. Vac. Sci. & Technol., B, 2017, 35, p. 06G502. • H. Geisler, M. Weisheit, H.-J. Engelmann, et al.: “The Challenge of Measuring Strain in FDSOI Device Structures – HRXRD as a Potential Method of Res- olution,” Adv. Eng. Mater., 2017, 19, p. 1600744. • L.C. Gontard, M. Batista, J. Salguero, et al.: “Three- Dimensional Chemical Mapping using Non- Destructive SEM [with EDX] and Photogrammetry,” Sci. Rep., 2018, 8, p. 11000. • M. Holler, M. Guizar-Sicairos, E.H.R. Tsai, et al.: “High- Resolution Non-Destructive Three-Dimensional Imaging of Integrated Circuits [using X-Rays],” Nature, 2017, 543, p. 402; also seeP. Piwnicki: “3DX-Ray Imaging Makes the Finest Details of a Computer Chip Visible,” https://phys.org/news/2017-03-d-x-ray- imaging-finest-chip.html (accessed 3.23.2017). • J. Huang, M. Loeffler, E. Zschech, et al.: “Si Amorph- ization by Focused Ion Beam Milling: Point De- fect Model with Dynamic BCA Simulation and Experimental Validation,” Ultramicroscopy, Part B, 2018, 184, p. 52.

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